CSD-Grown Y1−xGdxBa2Cu3O7−δ-BaHfO3 Nanocomposite Films on Ni5W and IBAD Technical Substrates

Enhanced Physical Properties Of Indium Tin Oxide Films Grown on Zinc Oxide-Coated Substrates

Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...

Thermal Oxidation Times Effect on Structural and Morphological Properties of Molybdenum Oxide Thin Films Grown on Quartz Substrates

Molybdenum oxide (α-MoO)thin films were prepared on quartz and silicon substrates by thermal oxidation of Mo thin films deposited using DC magnetron sputtering method. The influence of thermal oxidation times ranging from 60-240 min on the structural and morphological properties of the preparedfilms was investigated using X-ray diffraction, Atomic force microscopy and Fourier transform infrared...

Refractive index study of AlxGa1ÀxN films grown on sapphire substrates

A prism coupling method was used to measure the ordinary (no) and extraordinary (ne) refractive indices of AlxGa12xN films, grown by hydride vapor phase epitaxy ~HVPE! and metalorganic chemical vapor deposition ~MOCVD! on sapphire, at several discrete wavelengths from 442 nm to 1064 nm. In addition, spectroscopic transmittance and reflectance, correlated with the prism coupling results, were us...

Transport characteristics of magnetite thin films grown onto GaAs substrates

Magnetite thin films with a preferred ~111! orientation have been deposited by reactive dc magnetron sputtering from a pure Fe target onto ~100! GaAs substrates at 400 °C. The films show a clear Verwey transition in both the magnetization and sheet resistance as functions of temperature. For films deposited onto semiconducting n-type GaAs substrates, we have obtained asymmetric current–voltage ...

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates